پوشش وزنی سیناپسی و پتانسیل خروجی
Abstract
1- INTRODUCTION
2- THEORETICAL SYNAPTIC OPERATION
3- SIMULATIONS AND RESULTS
4- CONCLUSION
REFERENCES
Abstract
In this work, we present the study on a weight modulation of a synaptic transistor with a charge trapping layer, demonstrating the voltage-to-voltage transfer by employing a load resistor at the output and the pass-transistor operation concept. The synaptic weight as a transfer-efficiency is defined with the synaptic output in terms of the equivalent transistor resistance and load. Since the channel resistance of synaptic transistor can be modulated by the charge trapping, the synaptic plasticity is explained with a relative dominance of the transistor’s resistance with the fixed load resistance. To show the weight modulation following the theoretical analysis, respective simulations for the depression and facilitation are conducted.
INTRODUCTION
A synaptic device is a major component comprising a neuromorphic circuit for a brain-like computing, which mimics a synapse. Here, the connection between neurons is called a synapse, where the action potential transmission is controlled, depending on its signal experiences. The control appears as a variation of synaptic connection strength, i.e. weight [1, 2].
One of the several synaptic devices emulating the biological synapse, a synaptic transistor has the three terminals available for the synaptic input, output, and back-propagation (BP) signal. The experience-based transfer regulation has been demonstrated by inserting an additional insulating layer below the gate metal, where the charges are caught or pushed out depending on an input and back-propagated signal [3,4]. However, the synaptic transistor alone produces the current output. Since a biological synapse transmits the action potential [5, 6], we here provide the analysis and simulations on a synaptic-transistor weight-plasticity with a resistor at the output for the voltage-to-voltage transfer, rather using the current-tovoltage conversion circuit.