شبیه سازی زمان واقعی بر اساس FPGA سیستم الکترونیک قدرتمند
Abstract
I- Introduction
II- Voltage Distortion With Different IGBT Models
III- IGBT Transient Model
IV- Circuit Solver With FPGA
V- High-Power Traction System Simulation Study
VI- Conclusions
References
Abstract
The hardware-in-the-loop (HiL) simulation plays a vital role in the test of high-power electronic system. Although the application of field programmable gate array (FPGA) embedded system has enabled the real-time system simulating below 500ns, the transient characteristic of high voltage insulated-gate bipolar transistor (HVIGBT) is largely compromised. In this paper, a new piece-wise HVIGBT model, considering its driver circuit effect and parasite parameter, is proposed for FPGA-based real-time simulation applications. With the attempt to reduce the simulation latency, we propose a FPGA solver with a parallel structural to divide the system into several layers. The model could not only provide accurate system-level performance of the power electronic converter but also give an insight into the transient behavior effect of high-power electronic system. At last, a case study about emulation of traction system of high-speed train is also presented. Implementations are made on a FPGA Kintex-7 embedded in National Instruments FlexRIO PXIe-7975. The obtained results show that the proposed modeling algorithm can achieve both accuracy and efficiency within a fixed real-time simulation time step of 25 nanoseconds.
Introduction
The high voltage insulated-gate bipolar transistor (HVIGBT) is widely used in the electrified transportation where high voltage and current are required. Advancements in power electronics applications demand IGBT operating in high switching speed as well as high switching frequency [1]. Due to dead-time, switching time, delay time and voltage drops, the output voltage and current are distorted with respect to an ideal switch performance [2]. Its model precision is crucial for model-based motor control strategy [3]. Researching HVIGBT model is an important stream for theses megawatt power electronic system simulation. In recent years, there are three types of IGBT model used in real-time simulation. The most accurate model is numerical model, which solves the physical equations in analytical expression describing carriers and electrical behavior. The analytical model utilizes the parameter extracted from testing waveform and solves high-order physical equations. Despite these physical or device level models are assumed to be too complex to be implemented in FPGA, [4][5][6] have reported using physical or device level semiconductor simulation in FPGA. They are impressive for an FPGA implementation seeking low steps within acceptable on-chip resource utilization. However, these implementations are not suitable for a HVIGBT with high switch frequency and high switch speed. The relative slow calculation speed in their execution results a high latency between simulator and controller, which could largely affect the simulator’s response to the controller. As for the behavioral model [7][8][9], it treats semiconductor devices as ideal or nearly ideal switches when the semiconductors are in either completely on or completely off states. This idealization is suitable for the fast computation speed required by the real-time.